Description
Samsung 990 Pro 2 TB NVMe M.2 Internal SSD, PCIe Gen 4.0 x4, NVMe 2.0 Interface, 7450 MB/s Sequential Read Speed, 6900 MB/s Sequential Write Speed, 3.3 Voltage, V-NAND 3-bit MLC | MZ-V9P2T0BW
- Samsung NVMe SSD powered by newly designed in-house controller
- Up to 7,450 / 6,900 MB/s sequential read/write speed
- Power efficient SSD, reliable thermal control
The Ultimate SSD
Reach max performance of PCIe® 4.0. Experience longer-lasting, opponent-blasting speed. The in-house controller's smart heat control delivers supreme power efficiency while maintaining ferocious speed and performance, to always keep you at the top of your game.
PCIe 4.0’s best theoretical sequential read is 8,000 MB/s - 990 PRO reaches 7,450 MB/s as of Q3, 2022.
PCIe 4.0 speed maximised
Huge speed boost. 40% and 55% faster random read/write speeds than 980 PRO - up to 1,400K/1,550K IOPS, while sequential read/write speeds up to 7,450/6,900 MB/s reach near max performance of PCIe® 4.0. Fly high in gaming, video and 3D editing, data analysis, and more.
Sequential and random write performance was measured with Intelligent Turbo Write technology being activated. Intelligent Turbo Write operates only within a specific data transfer size. Performance may vary depending on SSD’s firmware, system hardware & configuration and other factors. For detailed information, please contact your local service centre. Test system configuration: AMD Ryzen 7 5800X 8-Core Processor CPU@3.80GHz, DDR4 3600MHz 16GBx2 (PC4-25600 Overclock), OS - Windows 10 Pro 64bit, Chipset - ASRock-X570 Taichi To maximise the performance of the 990 PRO, please check whether your system supports PCIe 4.0 at the Intel or AMD website. 4TB to be released in 2023.
Breakthrough power efficiency
More power-efficient performance. Higher performance usually consumes more power. 990 PRO uses less power with up to 50% improved performance per Watt over 980 PRO. This low-power design makes max PCIe® 4.0 performance possible with optimal power efficiency.
980 PRO Sequential Read/Write - 1,129/877 MB/Watt, 990 PRO Sequential Read/Write – 1,380/1,319 MB/Watt based on internal test result of 1TB capacity model.
Smart thermal solution
Speed beyond the heat. The nickel-coated controller and cutting-edge thermal control algorithm manage heat for unwavering performance. The heat spreader label controls NAND chip heat, while Dynamic Thermal Guard keeps temperatures optimal.
The champion maker
The best gameplay experience. A more than 55% improvement in random performance enables faster loads for ultimate gaming realism on PS5 and DirectStorage PC games.
DirectStorage technology from Microsoft loads games faster than before by leveraging the multiple GB/sec speed of modern NVMe SSDs. Results are based on a comparison with Samsung 980 PRO
Samsung Magician software
Unlock the full power of 990 PRO. Samsung Magician software's user-friendly suite of optimisation tools always gets you the best SSD performance. Protect data, get updates, and monitor drive health. Your personal SSD toolkit.
Magician software provides a toolkit to manage the 990 PRO for best performance. This toolkit supports Integrative Drive health checks, performance benchmarks and optimisations, and encrypted drive and firmware updates.
World's No. 1 Flash Memory
Experience superior performance and reliability you only get from the world's No.1 flash memory brand since 2003. All components and firmware are produced in-house, including Samsung's world-renowned DRAM and NAND, for integrated start-to-finish quality you can trust.
Source: 2003-Q4.2021 OMDIA data: NAND suppliers' revenue market share
Specifications
General Feature
- ApplicationClient PCs, Game Consoles
- Capacity 1,000GB (1GB=1 Billion byte by IDEMA) * Actual usable capacity may be less (due to formatting, partitioning, operating system, applications or otherwise)
- Form Factor M.2 (2280)
- Interface PCIe Gen 4.0 x4, NVMe 2.0
- Dimension (Pack: WxHxD)80 x 22 x 2.3 mm
- WeightMax 9.0g Weight
- Storage MemorySamsung V-NAND 3-bit MLC
- ControllerSamsung in-house Controller
- Cache MemorySamsung 1GB Low Power DDR4 SDRAM
Special Feature
- TRIM SupportSupported
- S.M.A.R.T SupportSupported
- GC (Garbage Collection)Auto Garbage Collection Algorithm
- Encryption SupportAES 256-bit Encryption (Class 0)TCG/Opal IEEE1667 (Encrypted drive)
- WWN SupportNot supported
- Device Sleep Mode SupportYes
Performance
- Sequential ReadUp to 7,450 MB/s * Performance may vary based on system hardware & configuration
- Sequential WriteUp to 6,900 MB/s * Performance may vary based on system hardware & configuration
- Random Read (4KB, QD32)Up to 1,200,000 IOPS * Performance may vary based on system hardware & configuration
- Random Write (4KB, QD32)Up to 1,550,000 IOPS * Performance may vary based on system hardware & configuration
- Random Read (4KB, QD1)Up to 22,000 IOPS * Performance may vary based on system hardware & configuration
- Random Write (4KB, QD1)Up to 80,000 IOPS * Performance may vary based on system hardware & configuration
Environment
- Average Power Consumption (system level)*Average: 5.4 W*Maximum: 7.8 W (Burst mode)* Actual power consumption may vary depending on system hardware & configuration
- Power consumption (Idle)Max. 50 mW * Actual power consumption may vary depending on system hardware & configuration
- Allowable Voltage3.3 V ± 5 % Allowable voltage
- Reliability (MTBF)1.5 Million Hours Reliability (MTBF)
- Operating Temperature0 - 70 ℃ Operating Temperature
- Shock1,500 G & 0.5 ms (Half sine)
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